STMicroelectronics SMX1J
The SMX1J7.5A Transil has been designed to protect sensitive equipment against electro-static discharges according to IEC 61000-4-2, MIL STD 883 Method 3015, and electrical over stress such as IEC 61000-4-4 and 5. They are generally for surges below 85 W 10/1000 µs. The Planar technology makes it compatible with high-end equipment and SMPS where low leakage current and high junction temperature are required to provide reliability and stability over time.| Part No. | SMX1J |
|---|---|
| Datasheet | SMX1J Download |
| Manufacturer |  STMicroelectronics |
| Description | TVS Clamping Diodes |
| Buy | Stock & Price |
FEATURES
● A Peak pulse power: – 85 W (10/1000 µs) – 800 W (8/20 µs) Stand off voltage 7.5 V Unidirectional Low leakage current: – 1 µA at 25 °C – 2 µA at 85 °C Operating Tj max: 150 °C High power capability at Tjmax: 78 W K●
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● µQFN 2L Figure 1. Functional diagram (top view)
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● Complies with the following standards
● IEC 61000-4-2 level 4 – 15 kV (air discharge) – 8 kV (contact discharge) MIL STD 883G - Method 3015-7 Class 3B – 25 kV HBM (human body model)
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DESCRIPTION
The SMX1J7.5A is packaged in µQFN 2 leads. TM: Transil is a trademark of STMicroelectronics November 2009 Doc ID 16180 Rev 2 1/11 11 Characteristics SMX1J 1 Table 1. Symbol PPP Tstg Tj TL Characteristics Absolute maximum ratings (Tamb = 25 °C) Parameter Peak pulse power dissipation (1) Storage temperature range Operating junction temperature range Maximum lead temperature for soldering during 10 s. Tj initial = Tamb Value 85 -65 to +150 -55 to +150 260 Unit W °C °C °C 1. For a surge greater than the maximum values, the diode will fail in short-circuit.
