STMicroelectronics SO2369
SMALL SIGNAL NPN TRANSISTORS
APPLICATIONS
. 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V CES V CBO V CEO V EBO I CM P t ot T stg Tj Parameter SO2369/A Collector-Emitter Voltage (V BE = 0) Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Peak Current Total Dissipation at T c = 25 C Storage Temperature Max. O perating Junction Temperature o Value BSV52 20 20 12 5 0.2 200 -65 to 150 150 40 40 15 4.5 Uni t V V V V A mW o o C C March 1996 1/5 BSV52/SO2369/SO2369A THERMAL DATA R t hj-amb● R th j-SR
● Thermal Resistance Junction-Ambient Thermal Resistance Junction-Substrate Max Max 620 400 o o C/W C/W
● Mounted on a ceramic substrate area = 7 x 5 x 0.5 mm
ELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symb ol I CBO Parameter Collector Cut-off Current (IE = 0) Test Cond ition s V CB = 20 V for SO2369/SO 2369A V CB = 10 V for BSV52 o T j = 150 C V CB = 10 V for BSV52 V CB = 20 V for SO2369A I C = 10 µ A for SO236...