STMicroelectronics SO5401
SMALL SIGNAL PNP TRANSISTORS
| Part No. | SO5401 |
|---|---|
| Datasheet | SO5401 Download |
| Manufacturer |  STMicroelectronics |
| Description | SMALL SIGNAL PNP TRANSISTORS |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO I CM P t ot T stg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Peak Current Total Dissipation at T c = 25 oC Storage Temperature Max. O perating Junction Temperature Value -160 -150 -5 -0.6 200 -65 to 150 150 Uni t V V V A mW o o C C October 1997 1/4 SO5401 THERMAL DATA R t hj-amb● R th j-SR
● Thermal Resistance Junction-Ambient Thermal Resistance Junction-Substrate Max Max 620 400 o o C/W C/W
● Mounted on a ceramic substrate area = 7 x 5 x 0.5 mm
ELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symb ol I CBO I EBO Parameter Collector Cut-off Current (IE = 0) Collector Cut-off Current (IC = 0) Test Cond ition s V CB = -120 V V EB = -3 V I C = -100 µ A -160 Min. Typ . Max. -50 -50 Un it nA nA V V ( BR)CBO ∗ Collector-Emitter Breakdown Voltage (I E = 0) V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdo...
