STMicroelectronics SO642
SMALL SIGNAL NPN TRANSISTOR
| Part No. | SO642 |
|---|---|
| Datasheet | SO642 Download |
| Manufacturer |  STMicroelectronics |
| Description | SMALL SIGNAL NPN TRANSISTOR |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM P t ot T stg Tj March 1996 Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Total Dissipation at T c = 25 C St orage Temperature Max. Operating Junction Temperature o Value 300 300 6 0.1 0.3 310 -65 to 150 150 Unit V V V A A mW o o C C 1/4 SO642 THERMAL DATA R t hj-amb● R th j-SR
● Thermal Resistance Junction-Ambient Thermal Resistance Junction-Substrate Max Max 450 320 o o C/W C/W
● Mounted on a ceramic substrate area = 15 x 15 x 0.7 mm
ELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symb ol I CBO Parameter Collector Cut-off Current (IE = 0) Test Cond ition s V CB = 200 V I C = 100 µA 300 Min. Typ . Max. 100 Un it nA V V ( BR)CBO ∗ Collector-Emitter Breakdown Voltage (I E = 0) V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Sat...
