STMicroelectronics SO692
SMALL SIGNAL PNP TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM P t ot T stg Tj March 1996 Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Total Dissipation at T c = 25 C St orage Temperature Max. Operating Junction Temperature o Value -300 -300 -5 -0.1 -0.3 310 -65 to 150 150 Unit V V V A A mW o o C C 1/4 SO692 THERMAL DATA R t hj-amb● R th j-SR
● Thermal Resistance Junction-Ambient Thermal Resistance Junction-Substrate Max Max 450 320 o o C/W C/W
● Mounted on a ceramic substrate area = 15 x 15 x 0.7 mm
ELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symb ol I CBO Parameter Collector Cut-off Current (IE = 0) Test Cond ition s V CB = -200 V I C = -100 µ A -300 Min. Typ . Max. -100 Un it nA V V ( BR)CBO ∗ Collector-Emitter Breakdown Voltage (I E = 0) V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-E...