SPV1001N Overview
The SPV1001N is a system-in-package solution for photovoltaic applications to perform cool bypass rectification similar to that of a conventional Schottky diode but with much lower forward voltage drop and reverse leakage current. The device consists of a power MOSFET transistor which charges a capacitor during the OFF time, and drives its gate during the ON time using the charge previously stored in the capacitor....
SPV1001N Key Features
- SPV1001N30 IF=12.5 A, VR=30 V
- SPV1001N40 IF=12.5 A, VR=40 V
- Very low forward voltage drop
- Very low reverse leakage current
- 150 °C operating junction temperature
