STMicroelectronics SPV1001N
The SPV1001N is a system-in-package solution for photovoltaic applications to perform cool bypass rectification similar to that of a conventional Schottky diode but with much lower forward voltage drop and reverse leakage current. The device consists of a power MOSFET transistor which charges a capacitor during the OFF time, and drives its gate during the ON time using the charge previously stored in the capacitor. The ON and OFF times are set to reduce the average voltage drop across the drain and source terminals, resulting in reduced power dissipation.| Part No. | SPV1001N |
|---|---|
| Datasheet | SPV1001N Download |
| Manufacturer |  STMicroelectronics |
| Description | Cool bypass switch |
| Buy | Stock & Price |
FEATURES
● SPV1001N30 IF=12.5 A, VR=30 V● SPV1001N40 IF=12.5 A, VR=40 V
● Very low forward voltage drop
● Very low reverse leakage current
● 150 °C operating junction temperature
APPLICATIONS
● Photovoltaic panelsDESCRIPTION
Anodo Catodo PQFN 5 x 6 mm Table 1. Device summary Order codes SPV1001N30 SPV1001N40 November 2011 Package PQFN 5 x 6 mm Doc ID 018938 Rev 2 Packaging Tape and reel 1/9 9 Maximum ratings 1 Maximum ratings SPV1001N 1.1 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Parameter Value SPV1001N30 SPV1001N40 VR IF IFSM Max DC reverse voltage Max forward current Non repetitive peak surge (half-wave, single phase 50-60 Hz) ESD level Human body level 30 12.5 250 ≥8 k 40 12.5 250 ≥8 k Unit V A A V 1.2 Thermal data Table 3. Thermal data Symbol Parameter TJ TSTG RthJC Junction temperature operating range Storage temperature range Thermal resistance, junction-to-case Value -40 to 150 -40 to 150 4 -40 to 150 -40 to 150 4 Unit °C °C °C/W 2/9 Doc ID 018938 Rev 2 SPV1001N 2 Electrical characteristics Electrical characteristics Table 4.
