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ST05250 - RF Power LDMOS transistor

General Description

The ST05250 is a 250 W, 28/32 V LDMOS FETs, designed for wideband communication and ISM applications in the frequency range from HF to 1 GHz.

It can be used in class AB, B or C for all typical modulation formats.

Key Features

  • Order code Frequency VDD POUT Gain Efficiency ST05250 945 MHz 28 V 250 W 13.5 dB 52 %.
  • High efficiency and linear gain operations.
  • Integrated ESD protection.
  • Large positive and negative gate-source voltage range for improved class C operation.
  • In compliance with the european directive 2002/95/EC.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ST05250 Datasheet 250 W, 28/32 V, HF to 1 GHz, RF Power LDMOS transistor 1 2 5 4 3 B4E Pin connection Pin Connection 1 Drain A 2 Drain B 3 Source (bottom side) 4 Gate B 5 Gate A Features Order code Frequency VDD POUT Gain Efficiency ST05250 945 MHz 28 V 250 W 13.