STMicroelectronics ST2310DHI
The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation.| Part No. | ST2310DHI |
|---|---|
| Datasheet | ST2310DHI Download |
| Manufacturer |  STMicroelectronics |
| Description | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
: s HORIZONTAL DEFLECTION HIGH END TVSDESCRIPTION
ISOWATT218 INTERNAL SCHEMATIC DIAGRAM RBE =32 Ω Typ.ABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM IB P tot V isol T stg Tj April 2003 Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Total Dissipation at T c = 25 o C Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink Storage Temperature Max. Operating Junction Temperature Value 1500 600 7 12 25 7 55 2500 -65 to 150 150 Unit V V V A A A W V o o C C 1/6 ST2310DHI THERMAL DATA R thj-case Thermal Resistance Junction-case Max 2.3 o C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symbol I CES I EBO V (BR)EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Test Conditions V CE = 1500 V V CE = 1500 V V EB = 4 V I E = 800 mA T J = 125 o C 70 7 Min.
