STMicroelectronics ST2310HI
The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation.| Part No. | ST2310HI |
|---|---|
| Datasheet | ST2310HI Download |
| Manufacturer |  STMicroelectronics |
| Description | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
: s HORIZONTAL DEFLECTION FOR MONITOR 15” AND HIGH END TVDESCRIPTION
ISOWATT218 INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM IB P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Total Dissipation at Tc = 25 o C St orage Temperature Max. Operating Junction Temperature Value 1500 600 6 10 20 7 55 -65 to 150 150 Uni t V V V A A A W o o C C February 2000 1/6 ST2310HI THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 2.3 o C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symb ol I CES I EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 1500 V V EB = 7 V I C = 100 mA L = 25 mH 600 Min. Typ . Max. 1 1 Un it mA mA V V CEO(sus )∗ Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat )∗ V BE(s at)∗ h F E...
