STMicroelectronics ST2317DFX
The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation.| Part No. | ST2317DFX |
|---|---|
| Datasheet | ST2317DFX Download |
| Manufacturer |  STMicroelectronics |
| Description | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
: HORIZONTAL DEFLECTION FOR LARGE / FLAT SCREEN COLOUR TVDESCRIPTION
ISOWATT218FX INTERNAL SCHEMATIC DIAGRAM RBE =32 Ω Typ.ABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM IB P tot V isol T stg Tj Parameter Collector-Base Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Total Dissipation at T C = 25 o C Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink Storage Temperature Max. Operating Junction Temperature Value 1700 600 7 10 20 7 70 2500 -65 to 150 150 Unit V V V A A A W V o o C C 1/5 December 2003 ST2317DFX THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1.8 o C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symbol I CES I EBO V (BR)EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Test Conditions V CE = 1700 V V CE = 1700 V V EB = 4 V I E = 800 mA T j = 125 o C 85 7 Min.
