STMicroelectronics ST2H8N120K5AG
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.| Part No. | ST2H8N120K5AG |
|---|---|
| Datasheet | ST2H8N120K5AG Download |
| Manufacturer |  STMicroelectronics |
| Description | Automotive-grade N-channel 1200V 6A Power MOSFET |
| Buy | Stock & Price |
FEATURES
1 2 Order code VDS RDS(on) max. ID ST2H8N120K5AG 1200 V 2.00 Ω 6A● AEC-Q101 qualified
● Very low FoM (figure of merit)
● Ultra-low gate charge
● 100% avalanche tested
● Zener-protected
● H2PAK-2 high creepage package suitable for very high voltage application
APPLICATIONS
● Switching applicationsDESCRIPTION
NG1DTS2Z Product status link ST2H8N120K5AG Product summary(1) Order code ST2H8N120K5AG Marking 8A120K5 Package H²PAK-2 HC Packing Tape and reel 1. HTRB test was performed at 80% of V(BR)DSS according to AEC-Q101 rev. C. All other tests were performed according to AEC-Q101 rev. D. DS15115 - Rev 2 - January 2026 For further information, contact your local STMicroelectronics sales office. ST2H8N120K5AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature range TJ Operating junction temperature range 1.
