STMicroelectronics ST50V10100
The ST50V10100 is a common source N-channel enhancement-mode lateral field effect RF power transistor designed for broadband commercial, Avionics and industrial applications at frequencies up to 1.5 GHz. It can be used in class A/AB and C for all typical modulation formats.| Part No. | ST50V10100 |
|---|---|
| Datasheet | ST50V10100 Download |
| Manufacturer |  STMicroelectronics |
| Description | RF Power LDMOS transistor |
| Buy | Stock & Price |
FEATURES
Order code FREQ VDD POUT (typ.) Gain ST50V10100 1000 MHz 50 V 100 W 18 dB● High efficiency and linear gain operations
● Integrated ESD protection
● Large positive and negative gate/source voltage range
● In compliance with the European Directive 2002/95/EC ND 60%
APPLICATIONS
● Industrial, scientific and medical from HF to 1.5 GHz● Avionics
DESCRIPTION
Product status link ST50V10100 Product summary Order code ST50V10100 Marking ST50V10100 Package M243 Packing TBD DS12763 - Rev 2 - March 2019 For further information contact your local STMicroelectronics sales office. ST50V10100 Electrical ratings 1 Electrical ratings Symbol BVDSS VGS ID TSTG TJ Table 1. Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Drain current Storage temperature range Junction temperature Value 110 -8 / +10 18 -65 to +150 +200 Unit V V A °C °C Symbol Rthj-case Table 2. Thermal data Parameter Thermal resistance junction-case, TCASE = +85 °C, POUT=100 W Value 0.75 Unit °C/W Symbol HBM Table 3.
