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ST50V10100 Datasheet Rf Power Ldmos Transistor

Manufacturer: STMicroelectronics

Overview: ST50V10100 Datasheet RF Power LDMOS transistor for frequencies up to 1.5 GHz M243 Epoxy sealed 1 1. Drain 2. Gate 3.

General Description

The ST50V10100 is a common source N-channel enhancement-mode lateral field effect RF power transistor designed for broadband commercial, Avionics and industrial applications at frequencies up to 1.5 GHz.

It can be used in class A/AB and C for all typical modulation formats.

Product status link ST50V10100 Product summary Order code ST50V10100 Marking ST50V10100 Package M243 Packing TBD DS12763 - Rev 2 - March 2019 For further information contact your local STMicroelectronics sales office.

Key Features

  • Order code FREQ VDD POUT (typ. ) Gain ST50V10100 1000 MHz 50 V 100 W 18 dB.
  • High efficiency and linear gain operations.
  • Integrated ESD protection.
  • Large positive and negative gate/source voltage range.
  • In compliance with the European Directive 2002/95/EC ND 60%.

ST50V10100 Distributor