ST7N Overview
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. 6(D) 5(D) 4(S) Order code STL7N6F7 Bottom view Marking ST7N AM11269v1 Table 1: Device summary Package PowerFLAT™ 2x2 Packing Tape and reel April 2017 DocID028257 Rev 3 This is...
ST7N Key Features
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
