STMicroelectronics ST8L65N044M9
This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure.| Part No. | ST8L65N044M9 |
|---|---|
| Datasheet | ST8L65N044M9 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel 650V 58A Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. ID ST8L65N044M9 650 V 44 mΩ 58 A● Very low FOM (RDS(on)●Qg)
● Higher dv/dt capability
● Excellent switching performance
● Easy to drive
● 100% avalanche tested
● Excellent switching performance thanks to the extra driving source pin Application
● AC-DC converters
● DC-DC converters
DESCRIPTION
Product status link ST8L65N044M9 The resulting product has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency. Product summary Order code ST8L65N044M9 Marking 65N044M9 Package PowerFLAT 8x8 HV Packing Tape and reel DS15002 - Rev 1 - June 2025 For further information, contact your local STMicroelectronics sales office. ST8L65N044M9 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous)...
