STMicroelectronics ST8L65N050DM9
This N-channel Power MOSFET is based on the most innovative super-junction MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast-recovery diode. The silicon-based DM9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure.| Part No. | ST8L65N050DM9 |
|---|---|
| Datasheet | ST8L65N050DM9 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel 650V 55A Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. ID ST8L65N050DM9 650 V 50 mΩ 55 A● Fast-recovery body diode
● Very low FOM (RDS(on)●Qg)
● Low gate charge, input capacitance and resistance
● 100% avalanche tested
● Extremely high dv/dt ruggednes
● Excellent switching performance thanks to the extra driving source pin
APPLICATIONS
● LLC resonant converter● Power supplies and converters
DESCRIPTION
Product status link ST8L65N050DM9 The fast-recovery diode featuring very low recovery charge (Qrr), time (trr) and RDS(on) makes this fast-switching super-junction Power MOSFET tailored for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product summary Order code ST8L65N050DM9 Marking 65N050DM9 Package PowerFLAT 8x8 HV Packing Tape and reel DS15084 - Rev 1 - October 2025 For further information, contact your local STMicroelectronics sales office. ST8L65N050DM9 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source...
