STMicroelectronics ST9060C
The ST9060C is a 28/32 V common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial, avionics and industrial applications at frequencies up to 1.5 GHz. The device can be used in Class A, AB and C for all typical modulation formats.| Part No. | ST9060C |
|---|---|
| Datasheet | ST9060C Download |
| Manufacturer |  STMicroelectronics |
| Description | RF Power LDMOS transistor |
| Buy | Stock & Price |
FEATURES
● Excellent thermal stability● Common source configuration
● Integrated ESD protection – HBM Class 2
● POUT (@28 V) = 80 W with 17 dB gain / 70% efficiency @945 MHz
● BeO free package
● In compliance with European Directive 2002/95/EC
DESCRIPTION
3 1. Drain 2. Gate 2 3. Source GADG310120180952IG Product status link ST9060C Product summary Order code ST9060C Package M243 Branding ST9060C DS12437 - Rev 2 - March 2018 For further information contact your local STMicroelectronics sales office. 1 Maximum ratings (TCASE = 25 °C) Symbol V(BR)DSS VGS ID PDISS TJ TSTG Table 1. Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Drain current Power dissipation (@ TC = 70 °C) Maximum operating junction temperature Storage temperature Symbol RthJC Table 2. Thermal data Parameter Junction-case thermal resistance ST9060C Maximum ratings Value Unit 90 V -10 +13 V 12 A 170 W 200 °C -65 to +150 °C Value 0.75 Unit °C/W DS12437 - Rev 2 page 2/12 ST9060C Electrical characteristics 2 Electrical characteristics (TCASE = 25 °C) Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) GFS CISS COSS CRSS Table 3.
