Datasheet4U.com

ST93CS46 Datasheet PDF

STMicroelectronics ST93CS46

the ST93CS46 – 2.5V to 5.5V for the ST93CS47 USER DEFINED WRITE PROTECTED AREA PAGE WRITE MODE (4 WORDS) SEQUENTIAL READ OPERATION 5ms TYPICAL PROGRAMMING TIME ST93CS46 and ST93CS47 are replaced by the M93S46 8 1 PSDIP8 (B) 0.4mm Frame 8 1 SO8 (M) 150mil Width Figure 1. The memory is accessed through a serial input D and output Q. The 1K bit memory is organized as 64 x 16 bit words.The memory is accessed by a set of instructions which include Read, Write, Page Write, Write All and instructions used to set the memory protection.
Part No. ST93CS46
Datasheet ST93CS46 Download
Manufacturer
STMicroelectronics
Description 1K 64 x 16 SERIAL MICROWIRE EEPROM
Buy Stock & Price
ST93CS46 datasheet page 1 preview

DESCRIPTION

The ST93CS46 and ST93CS47 are 1K bit Electrically Erasable Programmable Memory (EEPROM) fabricated with SGS-THOMSON’s High Endurance Single Polysilicon CMOS technology. A Read instruction loads the address of the first word to be read into an internal address pointer. Table 1. Signal Names S D Q C PRE W VCC VSS Chip Select Input Serial Data Input Serial Data Output Serial Clock Protect Enable Write Enable Supply Voltage Ground VCC D C S PRE W ST93CS46 ST93CS47 Q VSS AI00884B June 1997 This is information on a product still in production bu t not recommended for new de signs. 1/16 ST93CS46, ST93CS47 Figure 2A. DIP Pin Connections Figure 2B. SO Pin Connections ST93CS46 ST93CS47 S C D Q 1 2 3 4 8 7 6 5 AI00885B ST93CS46 ST93CS47 VCC PRE W VSS S C D Q 1 2 3 4 8 7 6 5 AI00886C VCC PRE W VSS Table 2.

ABSOLUTE MAXIMUM RATINGS

(1) Symbol TA TSTG TLEAD VIO VCC VESD Parameter Ambient Operating Temperature Storage Temperature Lead Temperature, Soldering (SO8 package) (PSDIP8 package)...
ST93CS46 page 2 preview ST93CS46 page 3 preview