ST93CS46 - (ST93CS46 / ST93CS47) 1K 64 x 16 SERIAL MICROWIRE EEPROM

Description

The ST93CS46 and ST93CS47 are 1K bit Electrically Erasable Programmable Memory (EEPROM) fabricated with SGS-THOMSON’s High Endurance Single Polysilicon CMOS technology.

The memory is accessed through a serial input D and output Q.

STMicroelectronics

📥 Download Datasheet

Datasheet Details

Part number	ST93CS46
Manufacturer	STMicroelectronics
File Size	157.60 KB
Description	(ST93CS46 / ST93CS47) 1K 64 x 16 SERIAL MICROWIRE EEPROM
Datasheet	ST93CS46 Datasheet
Additional preview pages of the ST93CS46 datasheet.

📁 Similar Datasheet

ST93C06 - 256 bit 16 x 16 or 32 x 8 SERIAL MICROWIRE EEPROM (ST Microelectronics)
ST93C06C - 256 bit 16 x 16 or 32 x 8 SERIAL MICROWIRE EEPROM (ST Microelectronics)
ST93C46A - (ST93C4xx) 1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM (ST Microelectronics)
ST93C46C - (ST93C4xx) 1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM (ST Microelectronics)
ST93C46T - (ST93C4xx) 1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM (ST Microelectronics)
ST93C47C - (ST93C4xx) 1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM (ST Microelectronics)
ST93C47T - (ST93C4xx) 1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM (ST Microelectronics)
ST93C66 - (ST93C66 / ST93C67) 4K 256 x 16 or 512 x 8 SERIAL MICROWIRE EEPROM (ST Microelectronics)
ST93C67 - (ST93C66 / ST93C67) 4K 256 x 16 or 512 x 8 SERIAL MICROWIRE EEPROM (ST Microelectronics)
ST90-125L2MI - Wet Tantalum Capacitors (Vishay)

Other Datasheets by STMicroelectronics

ST93CS47 - (ST93CS46 / ST93CS47) 1K 64 x 16 SERIAL MICROWIRE EEPROM
ST93CS56 - (ST93CS56 / ST93CS57) 2K 128 x 16 SERIAL MICROWIRE EEPROM
ST93CS57 - (ST93CS56 / ST93CS57) 2K 128 x 16 SERIAL MICROWIRE EEPROM
ST93CS66 - (ST93CS66 / ST93CS67) 4K 256 x 16 SERIAL MICROWIRE EEPROM
ST93CS67 - (ST93CS66 / ST93CS67) 4K 256 x 16 SERIAL MICROWIRE EEPROM
ST93003 - High voltage fast-switching PNP power transistor
ST9020 - RAM HCMOS MCUs
ST9030 - 8K ROM HCMOS MCU

Full PDF Text Transcription

Click to expand full text

www.DataSheet4U.com ST93CS46 ST93CS47 1K (64 x 16) SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE – 3V to 5.5V for the ST93CS46 – 2.5V to 5.5V for the ST93CS47 USER DEFINED WRITE PROTECTED AREA PAGE WRITE MODE (4 WORDS) SEQUENTIAL READ OPERATION 5ms TYPICAL PROGRAMMING TIME ST93CS46 and ST93CS47 are replaced by the M93S46 8 1 PSDIP8 (B) 0.4mm Frame 8 1 SO8 (M) 150mil Width Figure 1. Logic Diagram DESCRIPTION The ST93CS46 and ST93CS47 are 1K bit Electrically Erasable Programmable Memory (EEPROM) fabricated with SGS-THOMSON’s High Endurance Single Polysilicon CMOS technology.

Published: Sep 16, 2009 |