ST93CS66 - (ST93CS66 / ST93CS67) 4K 256 x 16 SERIAL MICROWIRE EEPROM

Description

The ST93CS66 and ST93CS67 are 4K bit Electrically Erasable Programmable Memory (EEPROM) fabricated with SGS-THOMSON’s High Endurance Single Polysilicon CMOS technology.

The memory is accessed through a serial input D and output Q.

STMicroelectronics

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Datasheet Details

Part number	ST93CS66
Manufacturer	STMicroelectronics
File Size	158.06 KB
Description	(ST93CS66 / ST93CS67) 4K 256 x 16 SERIAL MICROWIRE EEPROM
Datasheet	ST93CS66 Datasheet
Additional preview pages of the ST93CS66 datasheet.

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www.DataSheet4U.com ST93CS66 ST93CS67 4K (256 x 16) SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE – 3V to 5.5V for the ST93CS66 – 2.5V to 5.5V for the ST93CS67 USER DEFINED WRITE PROTECTED AREA PAGE WRITE MODE (4 WORDS) SEQUENTIAL READ OPERATION 5ms TYPICAL PROGRAMMING TIME ST93CS66 and ST93CS67 are replaced by the M93S66 8 1 PSDIP8 (B) 0.25mm Frame 14 1 SO14 (ML) 150mil Width Figure 1. Logic Diagram DESCRIPTION The ST93CS66 and ST93CS67 are 4K bit Electrically Erasable Programmable Memory (EEPROM) fabricated with SGS-THOMSON’s High Endurance Single Polysilicon CMOS technology.

Published: Sep 16, 2009 |