STMicroelectronics STAC4932F1MR
The STAC4932F1MR is an N-channel MOS fieldeffect RF power transistor. It is intended for use in 50 V / 80 V ISM applications up to 250 MHz. The STAC4932F1MR benefits from the latest generation of environmentally designed packaging, ruggedized against cyclic high moisture operation and severe storage conditions.| Part No. | STAC4932F1MR |
|---|---|
| Datasheet | STAC4932F1MR Download |
| Manufacturer |  STMicroelectronics |
| Description | 350W 50V HF/VHF DMOS |
| Buy | Stock & Price |
FEATURES
Order code STAC4932F1MR Frequency 123 MHz VDD 50 V POUT 450 W Gain 24 dB Efficiency 60 %● Improved ruggedness V(BR)DSS > 200 V
● Load mismatch 65:1 all phases @ 350 W - 50 V - 123 MHz
● POUT = 450 W typ. with 24 dB gain at 123 MHz
● In compliance with the 2002/95/EC European directive
● Moisture resistant package specifically designed to operate in extreme environments
● Drying recommendation before soldering: – 48 hrs at 125 °C
● Back finishing: – Sn96.5/Ag3/Cu0.5 solder – Base flatness < 0.2 mm – Gold content < 0.1% – Minimum solder thickness > 2 μm
DESCRIPTION
This device contains Beryllium oxide (BeO), which is hazardous if inhaled or ingested. Product status link STAC4932F1MR Product summary Order code STAC4932F1MR Marking STAC4932F1MR Package STAC780-4F Packing Box Base / Bulk qty 20 / 80 DS9904 - Rev 2 - April 2020 For further information contact your local STMicroelectronics sales office. STAC4932F1MR Electrical data 1 Electrical data 1.1 Maximum ratings 1.2 Table 1.
