STMicroelectronics STAC9200
The STAC9200 is a common source N-channel enhancement-mode lateral fieldeffect RF power transistor designed for broadband applications in the HF to 1300 MHz frequency range. The STAC9200 benefits from the latest generation of efficient STAC package technology.| Part No. | STAC9200 |
|---|---|
| Datasheet | STAC9200 Download |
| Manufacturer |  STMicroelectronics |
| Description | 32V HF to 1.3GHz LDMOS transistor |
| Buy | Stock & Price |
FEATURES
Order code STAC9200 Frequency 860 MHz VDD 32 V POUT 200 W Gain 16 dB Efficiency 60 %● Improved ruggedness: V(BR)DSS > 80 V
● Load mismatch 65:1 all phases at 200 W, 32 V, 860 MHz, PW 1ms, DC = 10%
● POUT = 200 W min. (230 W typ.) with 16 dB gain at 860 MHz
● In compliance with the 2002/95/EC European directive
● ST air-cavity STAC packaging technology
DESCRIPTION
Product status link STAC9200 Product summary Order code STAC9200 Marking STAC9200 Package STAC780-4B Packing Box DS9997 - Rev 4 - March 2020 For further information contact your local STMicroelectronics sales office. STAC9200 Electrical data 1 Electrical data Symbol V(BR)DSS VGS TJ TSTG Table 1. Absolute maximum ratings Parameter Drain source voltage (TCASE = 25 °C) Gate-source voltage (TCASE = 25 °C) Maximum operating junction temperature Storage temperature range Value 80 ±20 200 -65 to +150 Unit V V °C °C Symbol RthJC Table 2. Thermal data Parameter Junction-case thermal resistance Value 0.525 Unit °C/W Symbol HBM Table 3.
