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STAC9200 - 32V HF to 1.3GHz LDMOS transistor

General Description

The STAC9200 is a common source N-channel enhancement-mode lateral fieldeffect RF power transistor designed for broadband applications in the HF to 1300 MHz frequency range.

The STAC9200 benefits from the latest generation of efficient STAC package technology.

Key Features

  • Order code STAC9200 Frequency 860 MHz VDD 32 V POUT 200 W Gain 16 dB Efficiency 60 %.
  • Improved ruggedness: V(BR)DSS > 80 V.
  • Load mismatch 65:1 all phases at 200 W, 32 V, 860 MHz, PW 1ms, DC = 10%.
  • POUT = 200 W min. (230 W typ. ) with 16 dB gain at 860 MHz.
  • In compliance with the 2002/95/EC European directive.
  • ST air-cavity STAC packaging technology.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STAC9200 Datasheet 200 W, 32 V HF to 1.3 GHz LDMOS transistor in a STAC package 1 1 2 3 3 STAC780-4B Pin connection Pin Connection 1 Drain 2 Source (bottom side) 3 Gate Features Order code STAC9200 Frequency 860 MHz VDD 32 V POUT 200 W Gain 16 dB Efficiency 60 % • Improved ruggedness: V(BR)DSS > 80 V • Load mismatch 65:1 all phases at 200 W, 32 V, 860 MHz, PW 1ms, DC = 10% • POUT = 200 W min. (230 W typ.) with 16 dB gain at 860 MHz • In compliance with the 2002/95/EC European directive • ST air-cavity STAC packaging technology Description The STAC9200 is a common source N-channel enhancement-mode lateral fieldeffect RF power transistor designed for broadband applications in the HF to 1300 MHz frequency range.