STMicroelectronics START420
The START420 is a member of the START family that provide market with the state of the art of RF silicon process. It reaches performance level only achieved with GaAs products before.DESCRIPTION
Manufacturated in the third generation of ST proprietary bipolar process, it offers the best mix of gain and NF for given breakdown voltage(BVceo).APPLICATIONS
● LNA FOR GSM/DCS, DECT, PDC, PCS, PCN● PREDRIVER FOR DECT
● GENERAL PURPOSE 500MHz-5GHz
ABSOLUTE MAXIMUM RATINGS
Symbol Vceo Vcbo Vebo Ic Ib Ptot Tstg Tj Collector emitter voltage Collector base voltage Emitter base voltage Collector current Base current Total dissipation, Ts = 101 Storage temperature Max. operating junction temperature Parameter Value 4.5 15 1.5 40 4 180 -65 to 150 150 Unit V V V mA mA mW oC oCABSOLUTE MAXIMUM RATINGS
Rthjs Thermal Resistance Junction soldering point 270 oC/W July, 3 2002 1/7 START420ELECTRICAL CHARACTERISTICS
(Tj=25 oC,unless otherwise specified) Symbol Icbo Iebo Hfe NFmin Ga |S21|2 Gms (1) Parameter Collector cutoff current Emitter-base cutoff current DC current gain Minimim noise figure NFmin associated gain Insertion power gain Maximum stable gain 1dB compression point Oupu...