STMicroelectronics START450
The START450 is a member of the START family that provide the state of the art of RF silicon process to the market. It offers performance level only archived with GaAs products before.| Part No. | START450 |
|---|---|
| Datasheet | START450 Download |
| Manufacturer |  STMicroelectronics |
| Description | NPN Silicon RF Transistor |
| Buy | Stock & Price |
DESCRIPTION
Manufacturated in the third generation of ST proprietary bipolar process, it offers the best mix of gain and NF for given breakdown voltage(BVceo).APPLICATIONS
● LNA FOR GSM/DCS, DECT, PCS, PCN, CDMA, W-CDMA● PREDRIVER FOR DECT
● GENERAL PURPOSE 500MHz-5GHz
ABSOLUTE MAXIMUM RATINGS
Symbol Vceo Vcbo Vebo Ic Ib Ptot Tstg Tj Collector emitter voltage Collector base voltage Emitter base voltage Collector current Base current Total dissipation, Ts = TBD Storage temperature Max. operating junction temperature Parameter Value 4.5 15 1.5 100 10 450 -65 to 150 150 Unit V V V mA mA mW oC oCABSOLUTE MAXIMUM RATINGS
Rthjs Thermal Resistance Junction soldering point MAX ≤ 120 o C/W November, 20 2002 1/7 START450ELECTRICAL CHARACTERISTICS
(Tj=25 oC,unless otherwise specified) Symbol Icbo Iebo Hfe NFmin Ga |S21|2 Gms (1) Parameter Collector cutoff current Emitter-base cutoff current DC current gain Minimim noise figure NFmin associated gain Insertion power gain Maximum stable gain 1dB...
