STMicroelectronics START620
The START620 is a member of the START family that provide market with the state of the art of RF silicon process. It uses ST’s Silicon Germanium technology. This technology offers ft’s of up to 45GHz and Fmax’s of over 60GHz.| Part No. | START620 |
|---|---|
| Datasheet | START620 Download |
| Manufacturer |  STMicroelectronics |
| Description | NPN SiGe RF Transistor |
| Buy | Stock & Price |
DESCRIPTION
It uses ST’s Silicon Germanium technology. The START620 offers the best mix of gain and NF for given breakdown voltage(BVceo = 3.3V). It reaches performance level only achieved with GaAs products before.APPLICATIONS
● LNA FOR GSM/DCS, CDMA, WCDMA, BLUETOOTH● GENERAL PURPOSE 500MHz-5GHz
ABSOLUTE MAXIMUM RATINGS
Symbol Vceo Vcbo Vebo Ic Ib Ptot Tstg Tj Collector emitter voltage Collector base voltage Emitter base voltage Collector current Base current Total dissipation, Ts = 101 Storage temperature Max. operating junction temperature Parameter Value 3.3 10 1.5 40 4 135 -65 to 150 150 Unit V V V mA mA mW oC oCABSOLUTE MAXIMUM RATINGS
Rthjs Thermal Resistance Junction soldering point 270 oC/W May, 3 2002 1/5 START620ELECTRICAL CHARACTERISTICS
(Tj=25 oC,unless otherwise specified) Symbol Icbo Iebo Hfe NFmin Ga |S21|2 Gms (1) Parameter Collector cutoff current Emitter-base cutoff current DC current gain Minimim noise figure NFmin associated gain Insertion power gain Maximum s...
