STMicroelectronics STB100N6F7
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.| Part No. | STB100N6F7 |
|---|---|
| Datasheet | STB100N6F7 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
FEATURES
7$% Order code VDS RDS(on) max. ID PTOT STB100N6F7 60 V 5.6 mΩ 100A 125 W ' 3$. Figure 1. Internal schematic diagram ' 7$% *● Among the lowest RDS(on) on the market
● Excellent figure of merit (FoM)
● Low Crss/Ciss ratio for EMI immunity
● High avalanche ruggedness
APPLICATIONS
● Switching applicationsDESCRIPTION
6 $0 Y Order code STB100N6F7 Table 1. Device summary Marking Package 100N6F7 D²PAK Packaging Tape and Reel December 2015 This is information on a product in full production. DocID027210 Rev 3 1/15 Contents Contents STB100N6F7 1 Electrical rati
