Datasheet Summary
N-channel 60 V, 4.7 mΩ typ.,100 A STripFET™ F7 Power MOSFET in a D²PAK package
- production data
Features
7$%
Order code VDS RDS(on) max. ID PTOT STB100N6F7 60 V 5.6 mΩ 100A 125 W
'3$.
Figure 1. Internal schematic diagram
'7$%
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- Among the lowest RDS(on) on the market
- Excellent figure of merit (FoM)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
Applications
- Switching applications
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient...
