STB100NF03L-03 Datasheet PDF

DESCRIPTION

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

APPLICATIONS

s HIGH CURRENT, HIGH SWITCHING SPEED s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s SOLENOID AND RELAY DRIVERS

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VDGR VGS ID(1) ID(1) IDM(●) Ptot EAS(2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature INTERNAL SCHEMATIC DIAGRAM Value 30 30 ± 16 100 100 400 300 2 1.9 -55 to 175 (2) Starting T j = 25 oC, IAR = 50A, V DD = 50V Unit V V V A A A W W/°C J °C (●) Pulse width limited by safe operating area (1) Current Limited by Package February 2003 .