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STB100NF04T4 - N-channel Power MOSFET

General Description

These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge.

Key Features

  • Order code VDS STB100NF04T4 40 V STP100NF04 40 V RDS(on) max. 4.6 mΩ 4.6 mΩ ID Ptot 120 A 300 W 120 A 300 W D2PAK TO-220 3 2 1 Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3).
  • AEC-Q101 qualified.
  • Exceptional dv/dt capability.
  • 100% avalanche tested.
  • Low gate charge.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB100NF04T4, STP100NF04 Automotive-grade N-channel 40 V, 4.3 mΩ typ., 120 A STripFET™ II Power MOSFET in a D²PAK and TO-220 Datasheet p- parocdukcatiogn deasta TAB TAB Features Order code VDS STB100NF04T4 40 V STP100NF04 40 V RDS(on) max. 4.6 mΩ 4.6 mΩ ID Ptot 120 A 300 W 120 A 300 W D2PAK TO-220 3 2 1 Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3)  AEC-Q101 qualified  Exceptional dv/dt capability  100% avalanche tested  Low gate charge Applications  Switching applications Description These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge.