STMicroelectronics STB100NH02L
The STB100NH02L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable fot the most demanding DC-DC converter applications where high efficiency is to be achieved.| Part No. | STB100NH02L |
|---|---|
| Datasheet | STB100NH02L Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
INTERNAL SCHEMATIC DIAGRAMAPPLICATIONS
s SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTERSABSOLUTE MAXIMUM RATINGS
Symbol Vspike(1) VDS VDGR VGS ID(2) ID(2) IDM(3) Ptot EAS (4) Tstg Tj Parameter Drain-source Voltage Rating Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 30 24 24 ± 20 60 60 240 100 0.67 600 -55 to 175 Unit V V V V A A A W W/°C mJ °C 1/11 September 2003 DataSheet 4 U .com STB100NH02L THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max 1.5 62.5 300 °C/W °C/W °CELECTRICAL CHARACTERISTICS
(TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS I...
