Datasheet Summary
N-channel 800 V, 0.55 Ω typ., 8 A MDmesh™ K5 Power MOSFET in a D²PAK package
- production data
2 3
D²PAK
Figure 1: Internal schematic diagram
Features
Order code STB10LN80K5
VDS 800 V
RDS(on) max. 0.63 Ω
ID 8A
- Industry’s lowest RDS(on) x area
- Industry’s best figure of merit (FoM)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected
Applications
- Switching applications
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power...