STMicroelectronics STB10LN80K5
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 AM01476v1_tab technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.| Part No. | STB10LN80K5 |
|---|---|
| Datasheet | STB10LN80K5 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel 800V 8A Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. ID STB10LN80K5 800 V 630 mΩ 8A● Industry’s lowest RDS(on) x area
● Ultra-low gate charge
● Very low FoM (figure of merit)
● Zener-protected
● 100% avalanche tested
APPLICATIONS
G(1)● Switching applications
DESCRIPTION
S(3) Product status link STB10LN80K5 Product summary Order code STB10LN80K5 Marking 10LN80K5 Package D²PAK Packing Tape and reel DS10992 - Rev 3 - October 2025 For further information, contact your local STMicroelectronics sales office. STB10LN80K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature range TJ Operating junction temperature range 1. Pulse width is limited by safe operating area. 2. ISD ≤ 8 A, di/dt = 100 A/μs, VDS (peak) < V(BR)DSS.
