STB10N60M2 Overview
These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. STB10N60M2, STD10N60M2, STP10N60M2 Electrical ratings 1 Electrical ratings Table.
STB10N60M2 Key Features
- Extremely low gate charge
- Excellent output capacitance (Coss) profile
- 100% avalanche tested
- Zener-protected