STMicroelectronics STB10NB50
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.| Part No. | STB10NB50 |
|---|---|
| Datasheet | STB10NB50 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVEABSOLUTE MAXIMUM RATINGS
Symb ol V DS V DGR V GS ID ID I DM (● ) P tot dv/dt( 1) T s tg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T otal Dissipation at T c = 25 C Derating F actor Peak Diode Recovery voltage slope Storage T emperature Max. Operating Junction T emperature o INTERNAL SCHEMATIC DIAGRAM Value 500 500 ± 30 10.6 6.4 42.4 135 1.08 4.5 -65 to 150 150 ( 1) ISD ≤ 10.6A, di/dt ≤ 200 Α/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Unit V V V A A A W W /o C V/ns o o C C (●) Pulse width limited by...
