STMicroelectronics STB11N65M5
The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency.| Part No. | STB11N65M5 |
|---|---|
| Datasheet | STB11N65M5 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel 650V 9A Power MOSFET |
| Buy | Stock & Price |
FEATURES
TAB 23 3 1 D2 PAK 1 DPAK Order code VDS RDS(on) max. ID STB11N65M5 TAB STD11N65M5 650 V 480 mΩ 9A 3 2 1 TO-220FP TO-220 1 23 STF11N65M5 STP11N65M5 D(2, TAB)● 100% avalanche tested
● Excellent switching performance
● Extremely low RDS(on)
● Low gate charge and input capacitance G(1)
APPLICATIONS
● Switching applications S(3) AM01475v1_noZenDESCRIPTION
These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. Product status links STB11N65M5 STD11N65M5 STF11N65M5 STP11N65M5 DS8920 - Rev 4 - July 2025 For further information, contact your local STMicroelectronics sales office. STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(2) Drain current (pulsed) PTOT Total power dissipa...
