STMicroelectronics STB11NB40-1
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.| Part No. | STB11NB40-1 |
|---|---|
| Datasheet | STB11NB40-1 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL PowerMESH MOSFET |
| Buy | Stock & Price |
GENERAL FEATURES
Type STB11NB40 STB11NB40-1 VDSS 400 V 400 V RDS(on) < 0.55 Ω < 0.55 Ω ID 10.7 A 10.7 A STB11NB40 STB11NB40-1 Figure 1. PackageFEATURES
SUMMARY● TYPICAL RDS(on) = 0.48 Ω
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● EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED I2PAK TO-262 3 3 12 1 D2PAK TO-263
DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.APPLICATIONS
● HIGH CURRENT, HIGH SPEED SWITCHING●
● Figure 2. Internal Schematic Diagram SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE Table 2. Order Codes Part Number STB11NB40T4 STB11NB40-1 Marking B11NB40 B11NB40 Package D2PAK I2PAK Packaging TAPE & REEL TUBE REV. 2 April 2004 1/11 DataSheet 4 U .com STB11NB40/STB11NB40-1 Table 3.
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (1) Parameter Drain-source...
