STMicroelectronics STB11NM60-1
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics.STB11NM60-1 Specifications
- Package : TO-262-3
- Mount Type : Through Hole
- Current Rating : 11A
- Breakdown Voltage : 600V
- RDS(on) Max : 450mΩ
- Drain-Source Voltage : 650V
- Input Capacitance : 1nF
- Terminals : 3
- Rise Time : 20ns
- Fall Time : 11ns
- Max Power Dissipation : 110W
- Power Dissipation : 160W
- Max Operating Temp : 150°C
- Min Operating Temp : -65°C
Source:
Octopart
| Part No. | STB11NM60-1 |
|---|---|
| Datasheet | STB11NM60-1 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.APPLICATIONS
The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt(1) VISO Tstg Tj May 2003 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature TO-220 TO-220FP 3 1 D PAK 2 3 12 I2PAK INTERNAL SCHEMATIC DIAGRAM Value STP(B)11NM60(-1) 600 600 ±30 11 7 44 160 1.28 15 -–65 to 150 150 (*)Limited only by maximum temperature allowed (1)ISD<11...
