STB120N10F4 Datasheet | STMicroelectronics

Features 3 1 D 2PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram 'Ć7$% - Order codes RDS(on) max. ID STB120N10F4 STP120N10F4 100 V 10 mΩ 120 A - N-channel enhancement mode - Very low on-resistance - Low gate charge - 100% avalanche rated Applications - Switching applications Description These devices are N-channel Power MOSFETs developed using ST’s STrip FET™ Deep GATE™ technology. The devices have a new gate structure and are specially designed to minimize on-state resistance to provide superior switching performance. 6 $0Y Order codes STB120N10F4 STP120N10F4 Table 1. Device summary Marking Packages 120N10F4 D PAK TO-220 Packaging Tape and reel Tube April 2014 This is information on a product in full production. Doc ID026168 Rev...