Datasheet Details
| Part number | STB120N10F4 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 943.84 KB |
| Description | N-channel Power MOSFET |
| Datasheet |
 STB120N10F4 Datasheet
|
|
|
General Description
These devices are N-channel Power MOSFETs developed using ST’s STripFET™ DeepGATE™ technology.
The devices have a new gate structure and are specially designed to minimize on-state resistance to provide superior switching performance.
Table 1.
Key Features
- TAB 3 1 D 2PAK TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram ' Ć7$% .
- Order codes VDS RDS(on) max. ID STB120N10F4 STP120N10F4 100 V 10 mΩ 120 A.
- N-channel enhancement mode.
- Very low on-resistance.
- Low gate charge.
- 100% avalanche rated.