STMicroelectronics STB120N10F4
The devices have a new gate structure and are specially designed to minimize on-state resistance to provide superior switching performance.| Part No. | STB120N10F4 |
|---|---|
| Datasheet | STB120N10F4 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
TAB 3 1 D 2PAK TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram ' Ć7$% * Order codes VDS RDS(on) max. ID STB120N10F4 STP120N10F4 100 V 10 mΩ 120 A● N-channel enhancement mode
● Very low on-resistance
● Low gate charge
● 100% avalanche rated
APPLICATIONS
● Switching applicationsDESCRIPTION
These devices are N-channel Power MOSFETs developed using ST’s STripFET™ DeepGATE™ technology. 6 $0 Y Order codes STB120N10F4 STP120N10F4 Table 1. Device summary Marking Packages 120N10F4 2 D PAK TO-220 Packaging Tape and reel Tube April 2014 This is information on a product in full production. DocID026168 Rev 1 1/18 Contents Contents STB120N10F4, STP120N10F4 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
