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STB120N4LF6 - N-channel Power MOSFET

General Description

This product is a 40 V N-channel STripFET™ VI Power MOSFET based on the ST’s proprietary STripFET™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Figure 1.

Key Features

  • Order codes STB120N4LF6 STD120N4LF6 VDSS 40 V 40 V RDS(on) max 4.0 mΩ 4.0 mΩ ID 80 A 80 A.
  • Logic level drive.
  • 100% avalanche tested.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB120N4LF6 STD120N4LF6 N-channel 40 V, 3.1 mΩ, 80 A DPAK, D²PAK STripFET™ VI DeepGATE™ Power MOSFET Features Order codes STB120N4LF6 STD120N4LF6 VDSS 40 V 40 V RDS(on) max 4.0 mΩ 4.0 mΩ ID 80 A 80 A ■ Logic level drive ■ 100% avalanche tested Application ■ Switching applications – Automotive Description This product is a 40 V N-channel STripFET™ VI Power MOSFET based on the ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 3 1 DPAK 3 1 D²PAK Figure 1. Internal schematic diagram Table 1. Device summary Order codes STB120N4LF6 STD120N4LF6 Marking 120N4LF6 Packages D²PAK DPAK Packaging Tape and reel February 2011 Doc ID 16919 Rev 2 1/18 www.st.