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STB120NF10T4 - N-channel Power MOSFET

General Description

These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge.

Key Features

  • Order code STB120NF10T4 STP120NF10 STW120NF10 VDS 100 V RDS(on) max. 10.5 mΩ ID 110 A.
  • Exceptional dv/dt capability.
  • 100% avalanche tested.
  • Low gate charge.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB120NF10T4, STP120NF10, STW120NF10 N-channel 100 V, 9.0 mΩ typ., 110 A STripFET™ II Power MOSFETs in D²PAK, TO-220 and TO-247 packages Datasheet - production data TAB TAB D2PAK TO-220 3 2 1 TO-247 3 2 1 Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3) Features Order code STB120NF10T4 STP120NF10 STW120NF10 VDS 100 V RDS(on) max. 10.5 mΩ ID 110 A  Exceptional dv/dt capability  100% avalanche tested  Low gate charge Applications  Switching applications Description These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge.