STMicroelectronics STB12NK80Z
N-CHANNEL MOSFET
FEATURES
Type VDSS (@Tjmax) RDS(on) ID PW STB12NK80Z STF12NK80Z STP12NK80Z STW12NK80Z 800V 800V 800V 800V <0.75Ω 10.5 A 190W <0.75Ω 10.5 A 40W <0.75Ω 10.5 A 190W <0.75Ω 10.5 A 190W● Extremely high dv/dt capability
● Improved esd capability
● 100% avalanche tested
● Gate charge minimized
● Very low intrinsic capacitances
● Very good manufacturing reliability
APPLICATIONS
● Switching applications TAB 3 1 D2PAK TAB 3 2 1 TO-220FP 3 2 1 TO-220 TO-247 Figure 1. Internal schematic diagram D(2,TAB)DESCRIPTION
These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistanc