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STB12NM50-1 Datasheet PDF

STMicroelectronics STB12NM50-1

N-CHANNEL MOSFET

Part No. STB12NM50-1
Datasheet STB12NM50-1 Download
Manufacturer
STMicroelectronics
Description N-CHANNEL MOSFET
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STB12NM50-1 datasheet page 1 preview

DESCRIPTION

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. TO-220 3 2 1 TO-220FP 123 I PAK (Tabless TO-220) INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit STP(B)12NM50(-1) STP12NM50FP VDS Drain-source Voltage (VGS = 0) 500 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 500 V VGS Gate- source Voltage ±30 V ID Drain Current (continuos) at TC = 25°C 12 12(*) A ID Drain Current (continuos) at TC = 100°C 7.5 7.5(*) A IDM (q...
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