STMicroelectronics STB13005-1
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.| Part No. | STB13005-1 |
|---|---|
| Datasheet | STB13005-1 Download |
| Manufacturer |  STMicroelectronics |
| Description | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS |
| Buy | Stock & Price |
FEATURES
● Low spread of dynamic parameters● Minimum lot-to-lot spread for reliable operation
● Very high switching speed
● Through hole TO-262 (I2PAK) power package in tube (suffix “-1”)
APPLICATIONS
● Electronic ballast for fluorescent lighting● Switch mode power supplies
DESCRIPTION
123 I2PAK Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking (1) Package Packaging STB13005-1 B13005A B13005B I2PAK Tube 1. Product is pre-selected in DC current gain (group A and group B). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details. October 2007 Rev 1 1/11 11 Contents Contents STB13005 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
