STMicroelectronics STB13007DT4
This device is a high voltage fast-switching NPN power transistor, manufactured using high voltage multi-epitaxial planar technology for high switching speeds. It employs a cellular emitter structure with planar edge termination to enhance switching speeds, while maintaining a wide RBSOA.| Part No. | STB13007DT4 |
|---|---|
| Datasheet | STB13007DT4 Download |
| Manufacturer |  STMicroelectronics |
| Description | High voltage fast-switching NPN power transistor |
| Buy | Stock & Price |
FEATURES
TAB 23 1 DPAK C (2, TAB)● High voltage capability
● Integrated free-wheeling diode
● Low spread of dynamic parameters
● Minimum lot-to-lot spread for reliable operation
● Very high switching speed
● Fully characterized at 125 °C
● Large RBSOA
APPLICATIONS
B (1)● Electronic ballast for fluorescent lighting
● Switch mode power supplies E (3)
DESCRIPTION
NPNB1C2EE_D Product status link STB13007DT4 Product summary Order code STB13007DT4 Marking B13007D Package D²PAK Packing Tape and reel DS4802 - Rev 3 - June 2025 For further information, contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Absolute maximum rating Symbol Parameter VEBO Emitter-base voltage (IC = 0 A) VCEV Collector-emitter voltage (VBE = -1.5 V) VCEO Collector-emitter voltage (IB = 0 A) IC Collector current ICM Collector peak current (tP < 5 ms) IB Base current IBM Base peak current (tP < 5 ms) PTOT Total power dissipation at TC = 25 °C Tstg Storage temperature range TJ Maximum operating junction temperature Table 2.
