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STB130N6F7 - N-channel Power MOSFET

Datasheet Summary

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

  • Order code STB130N6F7 VDS 60 V RDS(on) max. 5.0 mΩ ID 80 A PTOT 160 W.
  • Among the lowest RDS(on) on the market.
  • Excellent figure of merit (FoM).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness.

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Datasheet preview – STB130N6F7

Datasheet Details

Part number STB130N6F7
Manufacturer STMicroelectronics
File Size 705.80 KB
Description N-channel Power MOSFET
Datasheet download datasheet STB130N6F7 Datasheet
Additional preview pages of the STB130N6F7 datasheet.

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Full PDF Text Transcription

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STB130N6F7 N-channel 60 V, 4.2 mΩ typ., 80 A STripFET™ F7 Power MOSFET in a D²PAK package Datasheet - production data TAB 3 1 D2PAK Figure 1: Internal schematic diagram D(2, TAB) G(1) Features Order code STB130N6F7 VDS 60 V RDS(on) max. 5.0 mΩ ID 80 A PTOT 160 W  Among the lowest RDS(on) on the market  Excellent figure of merit (FoM)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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