STB130N6F7 Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. S(3) Order code STB130N6F7 AM01475v1_Tab Table 1: Device summary Marking Package 130N6F7 D²PAK Packing Tape and reel December 2015 DocID027380 Rev 5 This is information on a...
STB130N6F7 Key Features
- Among the lowest RDS(on) on the market
- Excellent figure of merit (FoM)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness