STMicroelectronics STB130N6F7
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.| Part No. | STB130N6F7 |
|---|---|
| Datasheet | STB130N6F7 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STB130N6F7 VDS 60 V RDS(on) max. 5.0 mΩ ID 80 A PTOT 160 W● Among the lowest RDS(on) on the market
● Excellent figure of merit (FoM)
● Low Crss/Ciss ratio for EMI immunity
● High avalanche ruggedness
APPLICATIONS
● Switching applicationsDESCRIPTION
S(3) Order code STB130N6F7 AM01475v1_Tab Table 1: Device summary Marking Package 130N6F7 D²PAK Packing Tape and reel December 2015 DocID027380 Rev 5 This is information on a product in full production. 1/14 Contents Contents STB130N6F7 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves)...................................................... 5 3 Test circuits ..................................................................................... 7 4 Package information ....................................................................... 8 4.1 D²PAK (TO-263) type A package information ...................................
