STB130N6F7 Datasheet | STMicroelectronics

N-channel 60 V, 4.2 mΩ typ., 80 A STripFET™ F7 Power MOSFET in a D²PAK package - production data 3 1 D2PAK Figure 1: Internal schematic diagram D(2, TAB) G(1) Features Order code STB130N6F7 VDS 60 V RDS(on) max. 5.0 mΩ ID 80 A PTOT 160 W - Among the lowest RDS(on) on the market - Excellent figure of merit (FoM) - Low Crss/Ciss ratio for EMI immunity - High avalanche ruggedness Applications - Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient...