STMicroelectronics STB130NS04ZB-1
This fully clamped MOSFET is produced using ST’s latest advanced Mesh overlay process, which is based on an innovative strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions, such as those encountered in the automotive environment.| Part No. | STB130NS04ZB-1 |
|---|---|
| Datasheet | STB130NS04ZB-1 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
7$% Type VDS RDS(on) max. ID STB130NS04ZB-1 Clamped 9 mΩ 80 A , 3$. Figure 1. Internal schematic diagram● Designed for automotive applications and AEC-Q101 qualified
● 100% avalanche tested
● Low capacitance and gate charge
● 175°C maximum junction temperature
APPLICATIONS
● High switching current● Linear applications
DESCRIPTION
The device is also well-suited for other applications where extra ruggedness is required. Order code STB130NS04ZB-1 Table 1. Device summary Marking Package B130NS04ZB I2PAK September 2014 This is information on a product in full production. DocID026896 Rev 1 Packaging Tube 1/12 Contents Contents STB130NS04ZB-1 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
