STMicroelectronics STB140NF55
This Power Mosfet is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.| Part No. | STB140NF55 |
|---|---|
| Datasheet | STB140NF55 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
GENERAL FEATURES
TYPE STB140NF55 STP140NF55● STB140NF55 STP140NF55 Figure 1:Package RDS(on) ID 80 A 80 A VDSS 55 V 55 V < 0.008 Ω < 0.008 Ω TYPICAL RDS(on) = 0.0065 Ω
DESCRIPTION
APPLICATIONS
MOTOR CONTROL● HIGH CURRENT, SWITCHING
APPLICATIONS
● AUTOMOTIVE ENVIRONMENT● 3 1 3 1 2 D2PAK TO-263 (Suffix “T4”) TO-220 Figure 2: Internal Schematic Diagram Table 2: Order Codes Part Number STB140NF55T4 STP140NF55 MARKING B140NF55 P140NF55 PACKAGE D²PAK TO-220 PACKAGING TAPE & REEL TUBE Table 3:
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID ID IDM(●) Ptot dv/dt(1) EAS(2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 55 ± 20 80 80 320 300 2 10 1.3 -55 to 175 (1) ISD ≤80A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj...
