STMicroelectronics STB14NF10
N-CHANNEL POWER MOSFET
DESCRIPTION
This MOSFET series realized with STMicroelectronics INTERNAL SCHEMATIC DIAGRAM unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highwww.DataSheet4U.com efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROLABSOLUTE MAXIMUM RATINGS
Symbol Parameter STB14NF10 STP14NF10 VDS VDGR VGS ID ID IDM(●) Ptot dv/dt (1) EAS (2) VISO Tstg Tj Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Insulation Withstand Voltage (DC) Storage Temperature Operating...