STMicroelectronics STB14NM50N
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.| Part No. | STB14NM50N |
|---|---|
| Datasheet | STB14NM50N Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS @ TJmax RDS(on) max ID STB14NM50N 550 V 0.32 Ω 12 A● 100% avalanche tested
● Low input capacitance and gate charge
● Low gate input resistance
APPLICATIONS
● Switching applications Figure 1. Internal schematic diagram ' Ć7$% *DESCRIPTION
It is therefore suitable for the most demanding high efficiency converters. 6 $0 Y Order code STB14NM50N Table 1. Device summary Marking Package 14NM50N D²PAK Packaging Tape and reel June 2014 This is information on a product in full production. DocID024666 Rev 1 1/15 Contents Contents STB14NM50N 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
