STMicroelectronics STB15N65M5
The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.| Part No. | STB15N65M5 |
|---|---|
| Datasheet | STB15N65M5 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order codes STB15N65M5 STD15N65M5 VDS @ TJmax RDS(on) max ID 710 V < 0.34 Ω 11 A● Worldwide best RDS(on) * area
● Higher VDSS rating and high dv/dt capability
● Excellent switching performance
● 100% avalanche tested
APPLICATIONS
● Switching applicationsDESCRIPTION
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. TAB 2 1 D2PAK 3 TAB 3 1 DPAK Figure 1. Internal schematic diagram $ 4!" ' 3 !- V Table 1. Device summary Order codes STB15N65M5 STD15N65M5 Marking 15N65M5 Package D2PAK DPAK Packaging Tape and reel November 2012 This is information on a product in full production. Doc ID 023207 Rev 1 1/19 19 Contents Contents STB15N65M5, STD15N65M5 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
