DESCRIPTION
This device is particularly suitable for high current, low voltage switching application where efficiency is crucial. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS
s BUCK CONVERTERS IN HIGH PERFORMANCE TELECOM AND VRMs s DC-DC CONVERTERS ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID (1) ID IDM (q) PTOT EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 20 20 ±15 160 113 640 300 2 2.65 –65 to 175 175 (1) Limited by Package (2) I SD ≤100A, di/dt ≤300A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX. Unit V V V A A A W W/°C mJ °C °C (q) Pulse width limited by safe operating area February 2001 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
STMicroelectronics
