STB160NF03L Datasheet PDF | STMicroelectronics

STMicroelectronics STB160NF03L

This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density with ultra low on-resistance, superior switching characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Part No.	STB160NF03L
Datasheet	STB160NF03L Download
Manufacturer	STMicroelectronics
Description	N-CHANNEL POWER MOSFET
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DESCRIPTION

This device is particularly suitable for high current, low voltage switching application where efficiency is crucial. INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

s BUCK CONVERTERS IN HIGH PERFORMANCE TELECOM AND VRMs s DC-DC CONVERTERS

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VDGR VGS ID(1) ID IDM (q) PTOT EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 30 30 ±15 160 113 640 300 2 2 –65 to 175 175 (1) Limited by Package (2) I SD ≤100A, di/dt ≤300A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX. Unit V V V A A A W W/°C J °C °C (q) Pulse width limited by safe operating area February 2001 1/9 STB160NF03L THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction...