STMicroelectronics STB16NM50N
This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.| Part No. | STB16NM50N |
|---|---|
| Datasheet | STB16NM50N Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Type VDSS (@Tjmax) 550 V 550 V 550 V 550 V 550 V RDS(on) max 0.26 Ω 0.26 Ω 0.26 Ω 0.26 Ω 0.26 Ω ID 1 3 3 12 STB16NM50N STI16NM50N STF16NM50N STP16NM50N STW16NM50N 15 A 15 A 15 A (1) D²PAK 2 1 3 I²PAK 15 A 15 A 3 1 2 TO-247 3 1 2 1. Limited only by maximum temperature allowed●
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● 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-220 TO-220FP Figure 1. Internal schematic diagram Application
● Switching applications
DESCRIPTION
It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Marking B16NM50N I16NM50N F16NM50N P16NM50N W16NM50N Package D²PAK I²PAK TO-220FP TO-220 TO-247 Packaging Tape and reel Tube Tube Tube Tube Order codes STB16NM50N STI16NM50N STF16NM50N STP16NM50N STW16NM50N March 2008 Rev 2 1/18 18 Contents STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
