DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. D2PAK INTERNAL SCHEMATIC DIAGRAM APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT s ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt (1) Tstg Tj February 2003 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 250 250 ± 20 16 11 64 140 1 5 –65 to 175 175 (1) ISD≤ 16A, di/dt≤300 A/µs, VDD≤ V(BR)DSS, Tj≤TjMAX Unit V V V A A A W W/°C V/ns °C °C 1/9 (●)Pulse width limited by safe operating area STB16NS25 THERMAL DATA Rthj-case...
STMicroelectronics
